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vs-vsk.166..pbf, vs-vsk.196..pbf, vs-vsk.236..pbf series www.vishay.com vishay semiconductors revision: 30-apr-13 1 document number: 94357 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 standard recovery diodes, 165 a to 230 a (int-a-pak power modules) features ? high voltage ? electrically isolated by dbc ceramic (ai 2 o 3 ) ? 3500 v rms isolating voltage ? industrial standard package ? high surge capability ? glass passivated chips ? modules uses high voltage power diodes in four basic configurations ? simple mounting ? ul approved file e78996 ? designed and qualified for multiple level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? dc motor control and drives ? battery chargers ?welders ? power converters electrical specifications product summary i f(av) 165 a to 230 a type modules - diode, high voltage int-a-pak major ratings and characteristics symbol characteristics vsk.166.. vsk.196.. vsk.236.. units i f(av) 165 195 230 a t c 100 100 100 c i f(rms) 260 305 360 a i fsm 50 hz 4000 4750 5500 60 hz 4200 4980 5765 i 2 t 50 hz 80 113 151 ka 2 s 60 hz 73 103 138 i 2 ? t 798 1130 1516 ka 2 ? s v rrm 400 to 1600 v t j range - 40 to 150 c voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma vsk.166 ? vsk.196 ? vsk.236 04 400 500 20 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700
vs-vsk.166..pbf, vs-vsk.196..pbf, vs-vsk.236..pbf series www.vishay.com vishay semiconductors revision: 30-apr-13 2 document number: 94357 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 forward conduction parameter symbol test conditions vsk.166 vsk.196 vsk.236 units maximum average on-state ? current at case temperature i f(av) 180 conduction, half sine wave 165 195 230 a 100 100 100 c maximum rms on-state current i f(rms) 260 305 360 a maximum peak, one-cycle ? on-state, non-repetitive ? surge current i fsm t = 10 ms no voltage ? reapplied sine half wave, ? initial t j = ? t j maximum 4000 4750 5500 t = 8.3 ms 4200 4980 5765 t = 10 ms 100 % v rrm ? reapplied 3350 4000 4630 t = 8.3 ms 3500 4200 4850 maximum i 2 t for fusing i 2 t t = 10 ms no voltage ? reapplied 80 113 151 ka 2 s t = 8.3 ms 73 103 138 t = 10 ms 100 % v rrm ? reapplied 56 80 107 t = 8.3 ms 52 73 98 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 798 1130 1516 ka 2 ? s low level value of threshold voltage v f(to)1 (16.7 % x ? x i f(av) < i < ? x i f(av) ), t j maximum 0.73 0.69 0.7 v high level value of threshold voltage v f(to)2 (i > ? x i f(av) ), t j maximum 0.88 0.78 0.83 low level value on-state ? slope resistance r t1 (16.7 % x ? x i f(av) < i < ? x i f(av) ), t j maximum 1.5 1.3 1.2 m ? high level value on-state ? r t2 (i > ? x i f(av) ), t j maximum 1.26 1.2 1.07 maximum forward voltage drop v fm i fm = ? x i f(av) , t j = 25 c, 180 conduction ? average power = v f(to) x i f(av) + r f x (i f(rms) ) 2 1.43 1.38 1.46 v blocking parameter symbol test conditions vsk.166 vsk.196 vsk.236 units maximum peak reverse and ? off-state leakage current i rrm t j = 150 c 20 ma rms insulation voltage v ins 50 hz, circuit to base, all terminals shorted, ? t = 1 s 3500 v thermal and mechanical specifications parameter symbol test conditions values units vsk.166 vsk.196 vsk.236 maximum junction operating and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, ? junction to ca se per junction r thjc dc operation 0.2 0.16 0.14 k/w maximum thermal resistance, ? case to heatsink per module r thcs mounting surface smooth, flat and greased 0.05 mounting ? torque 10 % iap to heatsink a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of ? the compound. lubricated threads. 4 to 6 nm busbar to iap approximate weight 200 g 7.1 oz. case style int-a-pak
vs-vsk.166..pbf, vs-vsk.196..pbf, vs-vsk.236..pbf series www.vishay.com vishay semiconductors revision: 30-apr-13 3 document number: 94357 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc ? ? ? fig. 1 - current ra tings characteristics fig. 2 - current ra tings characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics ? r conduction per junction devices sinusoidal conduction at t j maximum rectangular conduction at t j maximum units 180 120 90 60 30 180 120 90 60 30 vsk.166 0.025 0.03 0.038 0.055 0.089 0.018 0.031 0.041 0.057 0.089 k/w vsk.196 0.016 0.019 0.024 0.034 0.053 0.012 0.02 0.026 0.035 0.054 vsk.236 0.009 0.010 0.014 0.018 0.025 0.008 0.012 0.015 0.019 0.025 120 110 100 130 140 150 90 80 70 maximum allowable case temperature (c) average forward current (a) 40 80 120 160 200 0 30 60 90 120 180 vsk.166.. series r thjc (dc) = 0.20 k/w conduction angle ? 90 80 70 130 140 150 120 110 100 maximum allowable case temperature (c) average forward current (a) 50 100 150 200 250 300 0 dc 30 60 90 120 180 vsk.166.. series r thjc (dc) = 0.20 k/w ? conduction period 0 50 250 200 150 100 maximum average forward power loss (w) average forward current (a) 80 40 120 160 200 0 rms limit 180 120 90 60 30 vsk.166.. series t j = 150 c conduction angle ? 0 50 200 150 100 maximum average forward power loss (w) average forward current (a) 100 50 150 200 250 300 0 dc 180 120 90 60 30 rms limit vsk.166.. series per junction t j = 150 c ? conduction period 250 300
vs-vsk.166..pbf, vs-vsk.196..pbf, vs-vsk.236..pbf series www.vishay.com vishay semiconductors revision: 30-apr-13 4 document number: 94357 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non- repetitive surge curren t fig. 6 - maximum non- repetitive surge current fig. 7 - on-state powe r loss characteristics fig. 8 - on-state powe r loss characteristics 2500 2000 1500 1000 4000 3500 3000 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 10 100 1 at 60 hz 0.0083 s at 50 hz 0.0100 s at any rated load condition and with rated v rrm applied following surge. vsk.166.. series initial t j = 150 c 500 4000 3500 3000 2500 2000 1500 1000 peak half sine wave forward current (a) pulse train duration (s) 0.1 1 0.01 maximum non-repetitive surge current initial t j = 150 c no voltage reapplied rated v rrm reapplied versus pulse train duration. vsk.166.. series 0 100 150 200 250 300 50 maximum total forward power loss (w) total rms output current (a) 50 100 150 200 250 0 dc vsk.166.. series per junction t j = 150 c 0 200 250 300 150 100 50 maximum total forward power loss (w) maximum allowable ambient temperature (c) 25 50 75 100 125 150 0 r thsa = 0 .12 k/w - r 0.2 k/w 0.3 k/w 0.4 k/w 0.5 k/w 0.7 k/w 0 1200 1800 maximum total power loss (w) total output current (a) 0 180 (sine) 180 (rect) 2 x vsk.166.. series single phase bridge connected t j = 150 c + - ~ 1600 1400 1000 800 600 400 200 100 200 300 400 500 0 800 600 400 200 1800 1600 1400 1200 1000 maximum total power loss (w) maximum allowable ambient temperature (c) 25 50 75 100 125 150 0 r thsa = 0.12 k/w - r 0.04 k/w 0.06 k/w 0.1 k/w 0.16 k/w 0.25 k/w 0.5 k/w
vs-vsk.166..pbf, vs-vsk.196..pbf, vs-vsk.236..pbf series www.vishay.com vishay semiconductors revision: 30-apr-13 5 document number: 94357 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - on-state powe r loss characteristics fig. 10 - current ra tings characteristics fig. 11 - current ra tings characteristics fig. 12 - on-state power loss characteristics fig. 13 - on-state power loss characteristics 0 800 600 400 200 1600 1400 1200 1000 maximum total power loss (w) total output current (a) 100 200 300 400 500 0 120 (rect) 3 x vsk.166.. series three phase bridge connected t j = 150 c - ~ 0 400 200 800 600 1600 1400 1200 1000 maximum total power loss (w) maximum allowable ambient temperature (c) 25 50 75 100 125 150 0 0.04 k/w 0.06 k/w 0.1 k/w 0.16 k/w 0.25 k/w 0.5 k/w r thsa = 0.02 k/w - r 70 100 110 120 130 140 150 90 80 maximum allowable case temperature (c) average forward current (a) 50 100 150 200 250 0 30 60 90 120 180 vsk.196.. series r thjc (dc) = 0.16 k/w ? conduction angle 70 100 110 120 130 140 150 90 80 maximum allowable case temperature (c) average forward current (a) 50 100 150 200 250 350 300 0 dc 30 60 90 120 180 vsk.196.. series r thjc (dc) = 0.16 k/w ? conduction period 0 200 250 300 150 100 50 maximum average forward power loss (w) average forward current (a) 40 80 120 160 200 0 rms limit 180 120 90 60 30 vsk.196.. series t j = 150 c conduction angle ? 0 300 350 250 200 150 100 50 maximum average forward power loss (w) average forward current (a) 50 100 150 200 250 300 350 0 dc 180 120 90 60 30 rms limit vsk.196.. series per junction t j = 150 c ? conduction period
vs-vsk.166..pbf, vs-vsk.196..pbf, vs-vsk.236..pbf series www.vishay.com vishay semiconductors revision: 30-apr-13 6 document number: 94357 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 14 - maximum non-repetiti ve surge current fig. 15 - maximum non-repetitive surge current fig. 16 - on-state po wer loss characteristics fig. 17 - on-state po wer loss characteristics 4500 4000 3500 3000 2500 2000 1500 1000 peal half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 10 100 1 at 60 hz 0.0083 s at 50 hz 0.0100 s at any rated load condition and with rated v rrm applied following surge. vsk.196.. series initial t j = 150 c 5000 4500 4000 3500 3000 2500 2000 1500 1000 peak half sine wave forward current (a) pulse train duration (s) 0.1 1.0 0.01 maximum non-repetitive surge current initial t j = 150 c no voltage reapplied rated v rrm reapplied versus pulse train duration. vsk.196.. series 0 200 250 300 350 150 100 50 maximum total forward power loss (w) total rms output current (a) 50 100 150 200 250 300 0 dc vsk.196.. series per junction t j = 150 c 0 300 350 250 200 150 100 50 maximum total forward power loss (w) maximum allowable ambient temperature (c) 25 50 75 100 125 150 0 r thsa = 0 .12 k/w - r 0.2 k/w 0.3 k/w 0.4 k/w 0.5 k/w 0.7 k/w 0 800 600 400 200 1200 1000 maximum total power loss (w) total output current (a) 100 200 300 400 0 180 (sine) 180 (rect) 2 x vsk.196.. series single phase bridge connected t j = 150 c + - ~ 800 600 400 200 0 1200 1000 maximum total power loss (w) maximum allowable ambient temperature (c) 25 125 150 50 75 100 0 0.04 k/w 0.06 k/w 0.08 k/w 0.12 k/w 0.16 k/w 0.25 k/w 0.4 k/w 0.7 k/w r thsa = 0.02 k/w - r
vs-vsk.166..pbf, vs-vsk.196..pbf, vs-vsk.236..pbf series www.vishay.com vishay semiconductors revision: 30-apr-13 7 document number: 94357 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 18 - on-state po wer loss characteristics fig. 19 - current ra tings characteristics fig. 20 - current ra tings characteristics fig. 21 - on-state power loss characteristics fig. 22 - on-state power loss characteristics 800 600 400 200 0 1800 1600 1400 1200 1000 maximum total power loss (w) total output current (a) 200 100 300 400 500 600 0 120 (rect) 3 x vsk.196.. series three phase bridge connected t j = 150 c + - ~ 0 800 600 400 200 1800 1600 1400 1200 1000 maximum total power loss (w) maximum allowable ambient temperature (c) 50 25 75 100 150 125 0 0.04 k/w 0.06 k/w 0.08 k/w 0.12 k/w 0.16 k/w 0.25 k/w 0.4 k/w r thsa = 0.12 k/w - r 130 140 150 160 120 110 100 90 80 maximum allowable case temperature (c) average forward current (a) 50 100 150 200 250 0 vsk.236.. series r thjc (dc) = 0.14 k/w ? conduction angle 180 90 120 60 30 130 140 150 120 110 100 90 80 70 maximum allowable case temperature (c) average forward current (a) 50 100 150 200 300 250 350 400 0 dc vsk.236.. series r thjc (dc) = 0.14 k/w ? conduction period 120 180 90 60 30 0 250 300 350 200 150 100 50 maximum average forward power loss (w) average forward current (a) 50 100 150 200 250 0 rms limit 180 120 90 60 30 vsk.236.. series t j = 150 c conduction angle ? 0 350 400 450 300 250 200 150 100 50 maximum average forward power loss (w) average forward current (a) 50 100 150 200 300 250 350 400 0 dc 180 120 90 60 30 rms limit vsk.236.. series per junction t j = 150 c ? conduction period
vs-vsk.166..pbf, vs-vsk.196..pbf, vs-vsk.236..pbf series www.vishay.com vishay semiconductors revision: 30-apr-13 8 document number: 94357 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 23 - maximum non-repetiti ve surge current fig. 24 - maximum non-repetitive surge current fig. 25 - on-state po wer loss characteristics fig. 26 - on-state po wer loss characteristics 5000 4500 4000 3500 3000 2500 2000 1500 peak half sine wave forward curren (a) number of equal amplitude half cycle current pulse (a) 10 100 1 vsk.236.. series at 60 hz 0.0083 s at 50 hz 0.0100 s at any rated load condition and with rated v rrm applied following surge. initial t j = 150 c 5000 3000 5500 4000 4500 3500 2500 2000 1500 1000 peak half sine wave forward current (a) pulse train duration (s) 0.1 1.0 0.01 maximum non-repetitive surge current vsk.236.. series initial t j = 150 c no voltage reapplied rated v rrm reapplied versus pulse train duration. 0 350 400 450 300 250 200 150 100 50 maximum total forward power loss (w) total rms output current (a) 50 100 150 200 250 300 350 0 dc vsk.236.. series per junction t j = 150 c 0 350 400 450 300 250 200 150 100 50 maximum total forward power loss (w) maximum allowable ambient temperature (c) 25 50 75 100 125 150 0 0.16 k/w 0.25 k/w 0.35 k/w 0.5 k/w 0.7 k/w r thsa = 0.1 k/w - r 0 1000 1600 maximum total power loss (w) total output current (a) 100 200 300 400 500 0 180 (sine) 180 (rect) 2 x vsk.236.. series single phase bridge connected t j = 150 c + - ~ 1400 1200 800 600 400 200 0 800 600 400 200 1600 1400 1200 1000 maximum total power loss (w) maximum allowable ambient temperature (c) 50 25 75 100 125 150 0 0.04 k/w 0.06 k/w 0.08 k/w 0.12 k/w 0.16 k/w 0.25 k/w 0.4 k/w r thsa = 0.02 k/w - r
vs-vsk.166..pbf, vs-vsk.196..pbf, vs-vsk.236..pbf series www.vishay.com vishay semiconductors revision: 30-apr-13 9 document number: 94357 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 27 - on-state po wer loss characteristics fig. 28 - on-state voltage drop characteristics fig. 29 - on-state voltage drop characteristics fig. 30 - on-state voltage drop characteristics fig. 31 - thermal impedance z thjc characteristics 0 500 2500 2000 1500 1000 maximum total power loss (w) total output current (a) 200 100 300 400 700 500 600 0 120 (rect) 3 x vsk.236.. series three phase bridge connected t j = 150 c + - ~ 0 500 2500 2000 1500 1000 maximum total power loss (w) maximum allowable ambient temperature (c) 50 25 75 100 150 125 0 0.04 k/w 0.06 k/w 0.1 k/w 0.16 k/w 0.3 k/ w 0.7 k/w r thsa = 0.02 k/w - r 1 100 10 10 000 1000 instantaneous on-state current (a) instantaneous on-state voltage (v) 0.5 1.0 1.5 2.0 3.0 2.5 3.5 4.0 0 t j = 25 c vsk.166.. series per junction t j = 150 c 1 100 10 10 000 1000 instantaneous on-state current (a) instantaneous on-state voltage (v) 1.0 2.0 3.0 4.0 5.0 0 t j = 25 c t j = 150 c vsk.196.. series per junction 1 100 10 10 000 1000 instantaneous on-state current (a) instantaneous on-state voltage (v) 1.0 2.0 3.0 4.0 5.0 0 t j = 25 c t j = 150 c vsk.236.. series per junction 0.01 0.1 1 z thjc - transient thermal impedance square wave pulse duration (s) 1 0.1 10 0.01 vsk.166.. series steady state value (dc operation)
vs-vsk.166..pbf, vs-vsk.196..pbf, vs-vsk.236..pbf series www.vishay.com vishay semiconductors revision: 30-apr-13 10 document number: 94357 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 32 - thermal impedance z thjc characteristics fig. 33 - thermal impedance z thjc characteristics ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 0.01 0.1 1 instantaneous on-state current (a) square wave pulse duration (s) 0.1 1.0 10 0.01 steady state value (dc operation) vsk.196.. series 0.01 0.1 1 instantaneous on-state current (a) square wave pulse duration (s) 0.1 1.0 10 0.01 steady state value (dc operation) vsk.236.. series device code 1 3 1 - module type - vishay semiconductors product 2 - circuit configuration (see circuit configuration table) 3 - current rating: i f(av) 4 - voltage code x 100 = v rrm 5 6 - pbf = lead (pb)-free vs- vsk d 236 / 16 pbf 5 6 2 4
vs-vsk.166..pbf, vs-vsk.196..pbf, vs-vsk.236..pbf series www.vishay.com vishay semiconductors revision: 30-apr-13 11 document number: 94357 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 circuit configuration circuit description circuit configuration code circuit drawing two diodes doubler circuit d two diodes common cathodes c two diodes common anodes j single diode e links to related documents dimensions www.vishay.com/doc?95254 v s kd... ~- + - + ~ v s kc... + - - - + - v s kj... - + + - + + v s ke... -+ + -
document number: 95254 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 11-dec-07 1 int-a-pak dbc outline dimensions vishay semiconductors dimensions in millimeters (inches) 17 (0.67) 23 (0.91) 23 (0.91) 3 screws m6 x 10 66 (2.60) 94 (3.70) 35 (1.38) 14.5 (0.57) 1 2 3 5 4 37 (1.44) 80 (3.15) ? 6.5 (? 0.25) 30 (1.18) 9 (0.33) 28 (1.10) 7 6
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